Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAspndiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99563
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4. Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wells
5. Effects of passivating ionic films on the photoluminescence properties of GaAs
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