Doping Level Dependence of Transport Properties in InAsSb Quantum Wells
Author:
Publisher
Elsevier BV
Subject
General Engineering
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1. Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers;AIP Advances;2021-04-01
2. Composition optimization of InAsxSb1−x/AlyIn1−ySb quantum wells for Hall sensors with high sensitivity and high thermal stability;AIP Advances;2021-03-01
3. Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE;Journal of Crystal Growth;2015-09
4. Relationship between transport properties and band diagrams in InAsxSb1−x/Al0.1In0.9Sb quantum wells;AIP Advances;2015-06
5. Recent Developments in Narrow Gap Semiconductor InSb and InAsSb Quantum Wells;Journal of the Vacuum Society of Japan;2014
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