Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs-Reference-Cited by-同舟云学术

Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs

Published:2007-04 Issue: Volume:301-302 Page:152-157
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Geka Hirotaka,Okamoto Atsushi,Yamada Satoshi,Goto Hiromasa,Yoshida Kazuo,Shibasaki Ichiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Mass production of InAs Hall elements by MBE

2. I. Shibasaki, Growth of InSb and InAs thin films and their application as practical magnetic sensors, in: Proceedings of the 10th International Conference on Narrow Gap Semiconductors, IPAP Conference Series, vol. 2, 2001, p. 137.

3. InSb thin films grown on GaAs substrate and their magneto-resistance effect

4. Transport properties of Sn-doped InSb thin films and applications to Hall element

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