Composition optimization of InAsxSb1−x/AlyIn1−ySb quantum wells for Hall sensors with high sensitivity and high thermal stability
Author:
Affiliation:
1. Department of Applied Physics, Fukuoka University, Jonan, Fukuoka 814-0180, Japan
2. The Noguchi Institute, Itabashi, Tokyo 173-0003, Japan
Funder
Japan Society for the Promotion of Science
Central Research Institute, Fukuoka University
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0039809
Reference18 articles.
1. Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors
2. S. Datta, T. Ashley, R. Chau, K. Hilton, R. Jefferies, T. Martin, and T. Phillips, in IEEE Proceedings of the International Electron Devices Meeting (IEEE, New York, 2005), p. 763.
3. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
4. Transport properties of Sn-doped InSb thin films and applications to Hall element
5. Transport properties of InSb and InAs thin films on GaAs substrates
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