Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE
Author:
Funder
JSPS KAKENHI
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Properties of Semiconductor Alloys; Group–IV, III–V and II–VI Semiconductors;Adachi,2009
2. Transport properties of Sn-doped InSb thin films and applications to Hall element
3. Transport properties of InSb and InAs thin films on GaAs substrates
4. Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs
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1. Composition optimization of InAsxSb1−x/AlyIn1−ySb quantum wells for Hall sensors with high sensitivity and high thermal stability;AIP Advances;2021-03-01
2. Micro-magnetic Field Measurement using Hall Element;IEEJ Transactions on Sensors and Micromachines;2018
3. Mass Production of Sensors Grown by Molecular Beam Epitaxy;Molecular Beam Epitaxy;2018
4. Indium–Arsenic–Antimony Materials and Devices;Reference Module in Materials Science and Materials Engineering;2016
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