Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency-Reference-Cited by-同舟云学术

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Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency

Published:2020-04 Issue: Volume:535 Page:125377
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dong Haiyun,Zhang Yang,Cui Lijie,Guan Min,Li Yiyang,Zhu Zhanping,Wang Baoqiang,Zeng Yiping

Funder

National Key R&D Program of China

National Natural Science Foundation of China

The Youth Innovation Promotion Association of Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference24 articles.

1. InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers;Lu;Semicond. Sci. Technol.,2014

2. Characterization of InSb quantum wells with atomic layer deposited gate dielectrics;Uddin;Appl. Phys. Lett.,2012

3. Effects of thermally generated carrier and temperature dependence mobility in InSb photoconductive detector under CW 10.6 µm laser irradiation;Jiang;Semicond. Sci. Technol.,2012

4. High electron mobility in InSb epilayers and quantum wells grown with AlSb nucleation on Ge-on-insulator substrates;Debnath;J. Vac. Sci. Technol. B.,2014

5. Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates;Debnath;J. Appl. Phys.,2012

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate;Semiconductor Science and Technology;2024-05-02

2. Influence of doping for InSb on ultrafast carrier dynamics measured by time-resolved terahertz spectroscopy;Applied Optics;2020-12-04

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