Relationship between transport properties and band diagrams in InAsxSb1−x/Al0.1In0.9Sb quantum wells-Reference-Cited by-同舟云学术

Relationship between transport properties and band diagrams in InAsxSb1−x/Al0.1In0.9Sb quantum wells

Published:2015-06 Issue:6 Volume:5 Page:067149
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Manago Takashi¹,Ishida Shuichi²,Geka Hirotaka³,Shibasaki Ichiro⁴

Affiliation:

1. Department of Applied Physics, Fukuoka University, Jonan, Fukuoka 814-0180, Japan

2. Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, Sanyo-Onoda, Yamaguchi 756-0884, Japan

3. Asahi Kasei Corporation, Fuji, Shizuoka 416-8501, Japan

4. The Noguchi Institute, Itabashi, Tokyo 173-0003, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4923192.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4923192&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference31 articles.

1. Dislocation filtering by AlxIn1−xSb∕AlyIn1−ySb interfaces for InSb-based devices grown on GaAs (001) substrates

2. Reduction of microtwin defects for high-electron-mobility InSb quantum wells

3. Spin-orbit interaction determined by antilocalization in an InSb quantum well

4. Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors

5. S. Datta, T. Ashley, R. Chau, K. Hilton, R. Jefferies, T. Martin, and T. Phillips, in IEEE Proceedings of the International Electron Devices Meeting (IEEE, New York, 2005), p. 763.

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