Spin-orbit interaction determined by antilocalization in an InSb quantum well-Reference-Cited by-同舟云学术

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Spin-orbit interaction determined by antilocalization in an InSb quantum well

Published:2010-02-02 Issue:7 Volume:81 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Kallaher R. L.,Heremans J. J.,Goel N.,Chung S. J.,Santos M. B.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.075303/fulltext

Reference53 articles.

1. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

2. A surface-gated InSb quantum well single electron transistor

3. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

4. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

5. Spin-polarized reflection in a two-dimensional electron system

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1. Quantum transport in InSb quantum well devices: progress and perspective;Journal of Physics: Condensed Matter;2024-06-24

2. Magnetic switching of spin-scattering centers in Dresselhaus [110] circuits;Physical Review B;2024-01-24

3. Observing magnetoanisotropic weak antilocalization in near-surface quantum wells;Physical Review Research;2024-01-11

4. Identification of electronic dimensionality reduction in semiconductor quantum well structures;Journal of Electron Spectroscopy and Related Phenomena;2024-01

5. Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well;Physical Review Research;2023-02-15

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