Reduction of microtwin defects for high-electron-mobility InSb quantum wells-Reference-Cited by-同舟云学术

Reduction of microtwin defects for high-electron-mobility InSb quantum wells

Published:2007-08-06 Issue:6 Volume:91 Page:062106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mishima T. D.,Edirisooriya M.,Santos M. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2768033

Reference22 articles.

1. S. Datta, T. Ashley, R. Chau, K. Hilton, R. Jefferies, T. Martin, and T. Phillips, IEEE Proceedings of the International Electron Devices Meeting (IEEE, New York, 2005), pp. 763–766.

2. Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording

3. Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

4. Effect of temperature on ballistic transport in InSb quantum wells

5. Anisotropic structural and electronic properties of InSb/AlxIn1−xSb quantum wells grown on GaAs (001) substrates

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs);Journal of Computational Electronics;2020-04-22

2. Hillock-free and atomically smooth InSb QWs grown on GaAs substrates by MBE;Journal of Crystal Growth;2019-05

3. High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer;ACS Omega;2018-11-01

4. Optimization of metamorphic buffers for MBE growth of high quality AlInSb/InSb quantum structures: Suppression of hillock formation;Journal of Crystal Growth;2017-11

5. Formation of periodic interfacial misfit dislocation array at the InSb/GaAs interface via surface anion exchange;Journal of Applied Physics;2016-07-21