Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0045483
Reference22 articles.
1. Materials design parameters for infrared device applications based on III-V semiconductors
2. Conduction- and Valence-Band Energies in Bulk InAs1−x Sb x and Type II InAs1−x Sb x /InAs Strained-Layer Superlattices
3. Molecular beam epitaxial growth and optical properties of InAs1−xSbxin 8–12 μm wavelength range
4. Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
5. Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy
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1. Growth of droplet-free InSbBi on GaAs substrate;AIP Advances;2023-12-01
2. Metamorphic growth of 0.1 eV InAsSb on InAs/GaAs virtual substrate for LWIR applications;Applied Surface Science;2023-06
3. Post-Growth Annealing and InGaSb Layer Insertion Effects on Metamorphic InAsSb on GaAs Substrate;2022 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR);2022-07-31
4. Post-Growth Annealing and InGaSb Layer Insertion Effects on Metamorphic InAsSb on GaAs Substrate;Proceedings of the 2022 Conference on Lasers and Electro-Optics Pacific Rim;2022
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