Post-Growth Annealing and InGaSb Layer Insertion Effects on Metamorphic InAsSb on GaAs Substrate

Abstract

We investigated the effect of post-growth annealing on metamorphic InAsSb on GaAs. The mid-infrared range photoluminescence intensity was improved, however, the surface flatness was deteriorated. The photoluminescence was also improved by inserting the InGaSb layer.