Comparative studies of normally-off Al 0.26 Ga 0.74 N/AlN/GaN/Si high electron mobility transistors with different gate structures-Reference-Cited by-同舟云学术

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Comparative studies of normally-off Al 0.26 Ga 0.74 N/AlN/GaN/Si high electron mobility transistors with different gate structures

Published:2017-08 Issue: Volume:66 Page:39-43
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lee Ching-Sung,Hsu Wei-Chou,Liu Han-Yin,Chen Si-Fu,Chen Yu-Chang,Yang Shen-Tin

Funder

Ministry of Science and Technology

MOST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

1. AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

2. Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0001) vicinal substrates

3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors;Journal of Physics and Chemistry of Solids;2019-06

2. Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-05-30

3. Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches;Semiconductors;2019-03

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