Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications-Reference-Cited by-同舟云学术

Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications

Published:2019-05-30 Issue: Volume: Page:e2625
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

R. Poornachandran^ORCID,N. Mohankumar¹,R. Saravana Kumar²,G. Sujatha³

Affiliation:

1. ECE, SKP Engineering College Tiruvannamalai Tamil Nadu India

2. ECE, Bannari Amman Institute of Technology Sathyamangalam Tamil Nadu India

3. ECE, Arunai Engineering College Tiruvannamalai Tamil Nadu India

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2625

Reference37 articles.

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4. Microwave performance of AlInAs‐GalnAs HEMT's with 0.2‐ and 0.1‐μm gate length;Mishra UK;IEEE Electron Device Lett,1988

5. EdwardYC ChingIK HweiPH Chia‐YuanC.InAs/In1‐xGaxAs composite channel high electron mobility transistors for high speed applications 2008 European Microwave Integrated Circuit Conference.2008;198–201.

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