Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT-Reference-Cited by-同舟云学术

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Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT

Published:2021-03-30 Issue:6 Volume:50 Page:3569-3579
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Poornachandran R.^ORCID,Mohankumar N.,Saravana Kumar R.,Sujatha G.,Girish Shankar M.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-021-08845-4.pdf

Reference51 articles.

1. M. Venkatesh, M. Suguna, and N.B. Balamurugan, J. Electron. Mater. 48, 6724 (2019).

2. M. Venkatesh, M. Suguna, and N.B. Balamurugan, Silicon 12, 2869 (2020).

3. K. Jena, R. Swain, and T.R. Lenka, Int. J. Numer. Model. Electron. Netw. Devices Fields 29, 83 (2016).

4. Preethi, S., & Balamurugan, N. B., Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method. Silicon (2020).

5. X. Tan, X.-Y. Zhou, H.-Y. Guo, G.-D. Gu, Y.-G. Wang, X.-B. Song, J.-Y. Yin, Y.-J. Lv, and Z.-H. Feng, Chinese Phys. Lett. 33, 98501 (2016).

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