Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/9/098501/pdf
Reference13 articles.
1. Physics of Semiconductor Devices
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3. High performance fully-depleted tri-gate CMOS transistors
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