InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4757684/4772181/04772263.pdf?arnumber=4772263
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024
2. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01
3. Sheet‐carrier density and I‐V analysis of In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As/InAs/In 0.7 Ga 0.3 As dual channel double gate HEMT for THz applications;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-05-30
4. Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing;ECS Journal of Solid State Science and Technology;2019
5. $$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$ In 0.7 Ga 0.3 As / InAs / In 0.7 Ga 0.3 As composite-channel double-gate (DG)-HEMT devices for high-frequency applications;Journal of Computational Electronics;2017-05-06
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