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Reactive evaporation of SiOx films for passivation of GaN high-electron-mobility transistors

  • Published:2019-06 Issue: Volume:129 Page:54-60
  • ISSN:0022-3697
  • Container-title:Journal of Physics and Chemistry of Solids
  • language:en
  • Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Zhu Gengchang,Liang Guangda,Zhou Yang,Chen Xiufang,Xu Xiangang,Feng Xianjin,Song Aimin

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Engineering and Physical Sciences Research Council

CAEP THz Science and Technology Foundation

Key Research and Development Program of Shandong Province, China

Developing Foundation of CAEP

Suzhou Planning Projects of Science and Technology

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference53 articles.

1. GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325 oC;Medjdoub,2010

2. W-band MMIC PA with ultrahigh power density in 100-nm AlGaN/GaN Technology;Shaobing;IEEE Trans. Electron. Dev.,2016

3. Ultrahigh-speed GaN high-electron-mobility transistors with fT/fmax of 454/444 GHz;Tang;IEEE Electron. Device Lett.,2015

4. 1.4-kV AlGaN/GaN HEMTs on a GaN-on-SOI platform;Jiang;IEEE Electron. Device Lett.,2013

5. “Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors;Tarakji;Appl. Phys. Lett.,2001

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