Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches-Reference-Cited by-同舟云学术

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Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

Published:2019-03 Issue:3 Volume:53 Page:406-410
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Tsai Jung-Hui,Lin Pao-Sheng,Chen Yu-Chi,Liou Syuan-Hao,Niu Jing-Shiuan

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782619030187.pdf

Reference14 articles.

1. C. C. Cheng, Y. Y. Tsai, K. W. Lin, H. I. Chen, and W. C. Liu, Appl. Phys. Lett. 86, 112103 (2005).

2. Y. S. Lin and B. Y. Chen, J. Electrochem. Soc. 154, H406 (2007).

3. J. H. Tsai, S. S. Ye, D. F. Guo, and W. S. Lour, Semiconductors 46, 514 (2012).

4. D. Shahrjerdi, J. Nah, B. Hekmatshoar, T. Akyol, M. Ramon, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. 97, 213506 (2010).

5. C. S. Lee, W. C. Hsu, H. Y. Liu, S. F. Chen, Y. C. Chen, and S. T. Yang, Mater. Sci. Semicond. Process. 66, 39 (2017).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect;Journal of Ovonic Research;2024

2. Inverter Logic of AlGaAs/InGaAs Enhancement/Depletion-Mode Pseudomorphic High Electron Mobility Transistors with Virtual Channel Layers;ECS Journal of Solid State Science and Technology;2019

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