Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon-Reference-Cited by-同舟云学术

Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

Published:2007-05 Issue:5 Volume:62 Page:481-484
ISSN:0584-8547
Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Steen C.,Nutsch A.,Pichler P.,Ryssel H.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

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2. Dynamics of arsenic dose loss at the SiO2 interface during TED;Kasnavi,1998

3. Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and as implants into Si at different temperatures;Van den Berg;J. Vac. Sci. Technol., B,2002

4. Characterization of arsenic dose loss at the Si/SiO2 interface;Kasnavi;J. Appl. Phys.,2000

5. A model for phosphorus segregation at the silicon–silicon dioxide interface;Lau;Appl. Phys., A,1989

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