Detailed arsenic concentration profiles at Si/SiO2 interfaces-Reference-Cited by-同舟云学术

Detailed arsenic concentration profiles at Si/SiO2 interfaces

Published:2008-08-15 Issue:4 Volume:104 Page:043507
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pei Lirong,Duscher Gerd,Steen Christian,Pichler Peter,Ryssel Heiner,Napolitani Enrico,De Salvador Davide,Piro Alberto Maria,Terrasi Antonio,Severac Fabrice,Cristiano Filadelfo,Ravichandran Karthik,Gupta Naveen,Windl Wolfgang

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2967713

Reference33 articles.

1. Antimony and arsenic segregation at Si-SiO2interfaces

2. K. Shibahara, H. Furumoto, K. Egusa, M. Koh, and S. Yokoyama, in Silicon Front-End Technology—Materials Processing and Modelling, edited by N. E. B. Cowern, D. C. Jacobson, P. B. Griffen, P. A. Packan, and R. P. Webb, MRS Symposia Proceedings No. 532 (Materials Research Society, Pittsburgh, 1998), p. 23.

3. Arsenic Pileup at the SiO2 / Si Interface

4. Characterization of arsenic dose loss at the Si/SiO2 interface

5. Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures

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