Characterization of arsenic dose loss at the Si/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372169
Reference12 articles.
1. Arsenic Pileup at the SiO2 / Si Interface
2. Dose loss in phosphorus implants due to transient diffusion and interface segregation
3. Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface
4. Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface
5. Modeling Silicon Implantation Damage and Transient Enhanced Diffusion Effects for Silicon Technology Development
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