Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface
Author:
Affiliation:
1. Institute of Memory Technology Research and Development, Toshiba Memory Corporation, 1, Komukai-Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011295
Reference65 articles.
1. Antimony and arsenic segregation at Si-SiO2interfaces
2. Anomalous Uphill Diffusion and Dose Loss of Ultra-Low-Energy Implanted Boron in Silicon during Early Stage of Annealing
3. Loss of phosphorus due to segregation at Si∕SiO2 interfaces: Experiments and modeling
4. Distribution and segregation of arsenic at theSiO2/Si interface
5. Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates
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