Distribution and segregation of arsenic at theSiO2/Si interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2956700
Reference34 articles.
1. Antimony and arsenic segregation at Si-SiO2interfaces
2. Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si
3. Dopant Loss Origins of Low Energy Implanted Arsenic and Antimony for Ultra Shallow Junction Formation
4. Arsenic Pileup at the SiO2 / Si Interface
5. Characterization of arsenic dose loss at the Si/SiO2 interface
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