Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

Abstract

AbstractApplication of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.