Self-modulated field electron emitter: Gated device of integrated Si tip-on-nano-channel-Reference-Cited by-同舟云学术

Self-modulated field electron emitter: Gated device of integrated Si tip-on-nano-channel

Published:2016-12-05 Issue:23 Volume:109 Page:233501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Zhijun¹,Huang Yifeng¹,Pan Zhangxu¹,She Juncong¹²,Deng Shaozhi¹,Chen Jun¹^ORCID,Xu Ningsheng¹

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China

2. Sun Yat-sen University-Carnegie Mellon University (SYSU-CMU) Shunde International Joint Research Institute, Shunde 528300, People's Republic of China

Funder

Fundamental Research Funds for the Central Universities of China

Science & Technology and Information Department of Guangzhou City

SYSU-CMU Shunde International Joint Research Institute

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4971336

Reference32 articles.