Author:
Steen C.,Pichler P.,Ryssel H.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. R. Angelucci, A. Armigliato, E. Landi, D. Nobili, S. Solmi, in: ESSDERC 87, Tecnoprint, Bologna, 1987, p. 461.
2. Geometric Frustration of 2D Dopants in Silicon: Surpassing Electrical Saturation
3. Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
4. Solid phase epitaxial regrowth phenomena in silicon
5. Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals
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3 articles.
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