Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?-Reference-Cited by-同舟云学术

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Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?

Published:2008 Issue:1 Volume:26 Page:391
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Bennett N. S.,Smith A. J.,Gwilliam R. M.,Webb R. P.,Sealy B. J.,Cowern N. E. B.,O’Reilly L.,McNally P. J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

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