Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation-Reference-Cited by-同舟云学术

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Strain relaxation mechanism in SiGe-on-insulator fabricated by Ge condensation

Published:2005-08 Issue:2-4 Volume:281 Page:275-280
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Di Zengfeng,Huang Anping,Chu Paul K.,Zhang Miao,Liu Weili,Song Zhitang,Luo Suhua,Lin Chenglu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. High-quality strain-relaxed SiGe alloy grown on implanted silicon–on–insulator substrate

2. Molecular beam epitaxy growth and thermal stability of Si1−xGex layers on extremely thin silicon-on-insulator substrates

3. Relaxed silicon–germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure

4. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology;Applied Physics Letters;2018-01-29

2. Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique;Materials Science in Semiconductor Processing;2017-11

3. Modified postannealing of the Ge condensation process for better-strained Si material and devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-09

4. Efficient relaxation of strained-SiGe layers induced by thermal oxidation;Thin Solid Films;2010-02

5. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate;Chinese Physics Letters;2009-10-29

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