Modified postannealing of the Ge condensation process for better-strained Si material and devices-Reference-Cited by-同舟云学术

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Modified postannealing of the Ge condensation process for better-strained Si material and devices

Published:2010-09 Issue:5 Volume:28 Page:1020-1025
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Liu Xuyan,Ma Xiaobo,Du Xiaofeng,Liu Weili,Song Zhitang,Lin Chenglu

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3491186

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New strategies for producing defect free SiGe strained nanolayers;Scientific Reports;2018-02-13

2. Kinetics and Energetics of Ge Condensation in SiGe Oxidation;The Journal of Physical Chemistry C;2015-10-19

3. The Eya1 Phosphatase Promotes Shh Signaling during Hindbrain Development and Oncogenesis;Developmental Cell;2015-04

4. Rapid and Sensitive Method for the Determination of Eight Food Additives in Red Wine by Ultra-performance Liquid Chromatography Tandem Mass Spectrometry;Food Analytical Methods;2014-05-09

5. Integrations and challenges of novel high-k gate stacks in advanced CMOS technology;Progress in Materials Science;2011-07

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