Kinetics and Energetics of Ge Condensation in SiGe Oxidation-Reference-Cited by-同舟云学术

Kinetics and Energetics of Ge Condensation in SiGe Oxidation

Published:2015-10-19 Issue:43 Volume:119 Page:24606-24613
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

David Thomas¹,Benkouider Abdelmalek¹,Aqua Jean-Noël²,Cabie Martiane³,Favre Luc¹,Neisius Thomas⁴,Abbarchi Marco¹,Naffouti Meher¹⁵,Ronda Antoine¹,Liu Kailang¹,Berbezier Isabelle¹

Affiliation:

1. Aix-Marseille Univ. − CNRS, IM2NP, Faculté des Sciences de Jérôme, F-13397 Marseille, France

2. INSP, Boite 840, 4 pl. Jussieu, 75005 Paris, France

3. Aix-Marseille Univ., CP2M, Faculté des Sciences de Jérôme, F-13397 Marseille, France

4. Fédération de recherche en Sciences Chimiques de Marseille, Aix Marseille Université, Campus St Jérôme, 13397 Marseille cedex 20, France

5. Laboratoire de Micro-optoélectronique et Nanostructures, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.5b07062

Reference32 articles.

1. Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

2. Modified postannealing of the Ge condensation process for better-strained Si material and devices

3. Reduced carrier backscattering in heterojunction SiGe nanowire channels

4. High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

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