Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates-Reference-Cited by-同舟云学术

Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates

Published:2011-10-03 Issue:14 Volume:99 Page:142108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suh Junkyo,Nakane Ryosho,Taoka Noriyuki,Takenaka Mitsuru,Takagi Shinichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3647631

Reference15 articles.

1. Elementary scattering theory of the Si MOSFET

2. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

3. Hole transport in strained Si1−xGex alloys on Si1−yGey substrates

4. A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

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