Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures-Reference-Cited by-同舟云学术

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Scanning x-ray microscopy imaging of strain relaxation and fluctuations in thin patterned SiGe-on-insulator nanostructures

Published:2021-03-07 Issue:9 Volume:129 Page:095302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Girard G.¹,Berthelon R.²³⁴,Andrieu F.³^ORCID,Leake S. J.¹^ORCID,Chahine G. A.⁵^ORCID,Schülli T.¹,Eymery J.⁶^ORCID,Favre-Nicolin V.¹⁷^ORCID

Affiliation:

1. ESRF-The European Synchrotron, 38043 Grenoble Cedex 9, France

2. STMicroelectronics, 850 rue Monnet, B.P. 16, F-38926 Crolles, France

3. Université Grenoble Alpes, CEA, LETI, 17 rue des Martyrs, 38000 Grenoble, France

4. CEMES-CNRS, 29 Rue Jeanne Marvig, 31055 Toulouse Cedex 4, France

5. Université Grenoble Alpes, CNRS, Grenoble INP, SIMAP, 38000 Grenoble, France

6. Université Grenoble Alpes, CEA, IRIG, MEM, NRS, 17 rue des Martyrs, 38000 Grenoble, France

7. Université Grenoble Alpes, 38000 Grenoble, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0033494

Reference40 articles.

1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

2. Strain scaling for CMOS

3. Silicon-Germanium Strained Layer Materials in Microelectronics

4. Electrical and diffraction characterization of short and narrow MOSFETs on fully depleted strained silicon-on-insulator (sSOI)

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain distributions in carbon-doped silicon nanowires along [110] and [100] investigated by X-ray diffraction;Japanese Journal of Applied Physics;2023-12-18

2. Lattice Strain and Defects Analysis in Nanostructured Semiconductor Materials and Devices by High‐Resolution X‐Ray Diffraction: Theoretical and Practical Aspects;Small Methods;2021-12-23

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