Hole transport in strained Si1−xGex alloys on Si1−yGey substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368605
Reference33 articles.
1. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
2. CMOS scaling into the nanometer regime
3. Design rules for n-type SiGe hetero FETs
4. Electronic-band parameters in strainedSi1−xGexalloys onSi1−yGeysubstrates
5. High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
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