Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology

Author:

Reboh S.12,Coquand R.12,Barraud S.12,Loubet N.3,Bernier N.12,Audoit G.12,Rouviere J.-L.4,Augendre E.12,Li J.3,Gaudiello J.3,Gambacorti N.12,Yamashita T.3,Faynot O.12

Affiliation:

1. CEA, LETI, MINATEC Campus, 38054 Grenoble, France

2. University Grenoble Alpes, 38000 Grenoble, France

3. IBM Research, 257 Fuller Road, Albany, New York 12203, USA

4. CEA, INAC-MEM, 38054 Grenoble, France

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference29 articles.

1. C. Auth , C. Allen , A. Blattner , D. Bergstrom , M. Brazier , M. Bost , M. Buehler , V. Chikarmane , T. Ghani , T. Glassman et al., in VLSI Technical Digest (2012), pp. 131–132.

2. N. Loubet , T. Hook , P. Montanini , C.W. Yeung , S. Kanakasabapathy , M. Guillorn , T. Yamashita , J. Zhang , X. Miao , J. Wang et al., in VLSI Technical Digest (2017), pp. 230–231.

3. Device Exploration of NanoSheet Transistors for Sub-7-nm Technology Node

4. H. Mertens , R. Ritzenthaler , A. Hikavyy , M. S. Kim , Z. Tao , K. Wostyn , S. A. Chew , A. De Keersgieter , G. Mannaert , E. Rosseel et al., in VLSI Technical Digest (2016), pp. 1–2.

5. H. Mertens , R. Ritzenthaler , A. Chasin , T. Schram , E. Kunnen , A. Hikavyy , L.Å. Ragnarsson , H. Dekkers , T. Hopf , K. Wostyn et al., in IEDM Technical Digest (2016), pp. 524–527.

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