Relaxed silicon–germanium-on-insulator substrates by oxygen implantation into pseudomorphic silicon germanium/silicon heterostructure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1567807
Reference14 articles.
1. SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
2. Evolution of strain relaxation in step‐graded SiGe/Si structures
3. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
4. SiGe-on-insulator substrate using SiGe alloy grown Si(001)
5. SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen
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