SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121674
Reference16 articles.
1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon
2. Fabrication of sub-10-nm silicon lines with minimum fluctuation
3. Silicon-based optoelectronics
4. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
5. Optoelectronic aspects of strained Si1?xGex/Si quantum wells
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