Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate-Reference-Cited by-同舟云学术

Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate

Published:2014-02-11 Issue:3 Volume:211 Page:601-605
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yamasaka Shuto¹,Nakamura Yoshiaki¹²,Yoshitake Osamu¹,Kikkawa Jun¹,Izunome Koji³,Sakai Akira¹

Affiliation:

1. Graduate School of Engineering Science; Osaka University; 1-3 Machikaneyama Toyonaka Osaka 560-8531 Japan

2. PRESTO, JST; 4-1-8 Honcho Kawaguchi Saitama 332-0012 Japan

3. GlobalWafers Japan Co., Ltd.; 6-861-5 Higashikou Seirou-machi, Kitakanbara-gun Niigata 957-0197 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Self-assembled Ge/Si dots for faster field-effect transistors

2. Quantum-information processing with ferroelectrically coupled quantum dots

3. Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy

4. Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

5. Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates

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