Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.13721/fulltext
Reference21 articles.
1. Germanium “quantum dots” embedded in silicon: Quantitative study of self-alignment and coarsening
2. Vertical ordering of islands in Ge-Si multilayers
3. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
4. Growth and characterization of self-assembled Ge-rich islands on Si
5. Self-Organization in Growth of Quantum Dot Superlattices
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