Tuning the Luminescence Response of an Air-Hole Photonic Crystal Slab Using Etching Depth Variation

Author:

Peretokin Artem V.1,Yurasov Dmitry V.1,Stepikhova Margarita V.1,Shaleev Mikhail V.1,Yablonskiy Artem N.1,Shengurov Dmitry V.1,Dyakov Sergey A.2,Rodyakina Ekaterina E.34ORCID,Smagina Zhanna V.3,Novikov Alexey V.15ORCID

Affiliation:

1. Institute for Physics of Microstructures of the Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia

2. Skolkovo Institute of Science and Technology, 143026 Moscow, Russia

3. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

4. Physical Department, Novosibirsk State University, 630090 Novosibirsk, Russia

5. Radiophysical Department, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia

Abstract

Detailed studies of the luminescent properties of the Si-based 2D photonic crystal (PhC) slabs with air holes of various depths are reported. Ge self-assembled quantum dots served as an internal light source. It was obtained that changing the air hole depth is a powerful tool which allows tuning of the optical properties of the PhC. It was shown that increasing the depth of the holes in the PhC has complex influences on its overall photoluminescence (PL) response due to the simultaneous influences of counteracting factors. As a result, the maximal increase in the PL signal of more than two orders of magnitude was obtained for some intermediate, but not full, depth of the PhC’s air holes. It was demonstrated that it is possible to engineer the PhC band structure in such a way as to construct specific states, namely bound states in continuum (BIC), with specially designed dispersion curves being relatively flat. In this case, such states manifest themselves as sharp peaks in the PL spectra, and have high Q-factors which are larger than those of radiative modes and other BIC modes without such a flat dispersion characteristic.

Funder

Russian Science Foundation

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

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