Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4954200
Reference34 articles.
1. Silicon-on-Insulator Technology: Materials to VLSI
2. Fabrication of sub-10-nm silicon lines with minimum fluctuation
3. SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen
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1. Ion Synthesis of Silicon-on-Insulator Structures with a Lead-Silicate Insulating Layer;Technical Physics Letters;2021-12-20
2. Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07
3. Assembly and Self-Assembly of Nanomembrane Materials-From 2D to 3D;Small;2018-01-02
4. Diffusion and aggregation process of oxygen embedded around an amorphous/crystal interface of Si(001) studied by molecular dynamics simulation;Journal of Applied Physics;2017-05-14
5. A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+implantation;Journal of Physics D: Applied Physics;2016-07-19
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