Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon-Reference-Cited by-同舟云学术

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Infrared absorption spectrum studies of the VO defect in fast-neutron-irradiated Czochralski silicon

Published:2005-06 Issue:1-2 Volume:280 Page:60-65
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yang Shuai,Li Yangxian,Ma Qiaoyun,Liu Lili,Xu Xuewen,Niu Pingjuan,Li Yongzhang,Niu Shengli,Li Hongtao

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Damage induced in semiconductors by swift heavy ion irradiation

2. Defect generation in crystalline silicon irradiated with high energy particles

3. Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors

4. Defect engineering in Czochralski silicon by electron irradiation at different temperatures

5. Vacancy related defect profiles in MeV cluster-ion irradiated silicon

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1. Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation;Nuclear Engineering and Technology;2023-09

2. Study on SOI structure irradiated by electron and annealled treatment using C–V, FTIR and PL;Superlattices and Microstructures;2020-03

3. Facile Microemulsion Synthesis of Vanadium-Doped ZnO Nanoparticles to Analyze the Compositional, Optical, and Electronic Properties;Materials;2019-03-11

4. Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon;Journal of Electronic Materials;2018-10-25

5. Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon;Superlattices and Microstructures;2017-07

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