Study on SOI structure irradiated by electron and annealled treatment using C–V, FTIR and PL

Author:

Zhu Jiayu,Li Yun,Wang Shaomin,Wang Hongxia,Gong Min,Huang Mingmin,Ma Yao,Yang Zhimei

Funder

National Key R&D Plan

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Effect of temperature on capacitance–voltage characteristics of SOI [J];Jayatissa;Mater. Sci. Eng. B,2005

2. A novel low turnoff loss carrier stored SOI LIGBT with trench gate barrier[J];He;Superlattice Microstruct.,2016

3. Effect of back oxide thickness of FDSOI on SRAM performance [J];Roy;Superlattice Microstruct.,2016

4. Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions [J];Liu;Solid State Electron.,2010

5. Radiation effects in SOI: irradiation by high energy ions and electrons [J];Antonova;Sci. Technol. Semicond. On-Insulator Struct. Dev. Operat. Harsh Environ.,2004

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