Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon-Reference-Cited by-同舟云学术

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Beneficial Effect of Two-Step Annealing via Low Temperature of Vacancy Complexes in N-type Czochralski Silicon

Published:2018-10-25 Issue:1 Volume:48 Page:509-516
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hannachi Mohamed,Amri Chohdi,Hedfi Hachem,Zarroug Ahmed,Ezzaouia Hatem

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s11664-018-6732-5/fulltext.html

Reference46 articles.

1. J.E. Cotter, J.H. Guo, P.J. Cousins, M.D. Abbott, F.W. Chen, and K.C. Fisher, IEEE Trans. Electron Devices 53, 1893 (2006).

2. J. Schmidt and A. Cuevas, J. Appl. Phys. 86, 3175 (1999).

3. D. Macdonald and L.J. Geerligs, Appl. Phys. Lett. 85, 4061 (2004).

4. J. Schmidta, R. Krain, and K. Bothe, J. Appl. Phys. 102, 123701 (2007).

5. D. Macdonald, T. Rothb, and P.N.K. Deenapanray, Appl. Phys. Lett. 89, 142107 (2006).

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