Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon-Reference-Cited by-同舟云学术

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Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon

Published:2017-07 Issue: Volume:107 Page:91-96
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Dong Peng,Wang Rong,Yu Xuegong,Chen Lin,Ma Xiangyang,Yang Deren

Funder

Natural Science Foundation of China

Science Challenge Project

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference34 articles.

1. Oxygen defect processes in silicon and silicon germanium

2. Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

3. Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

4. Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon

5. Evidence for identification of the divacancy-oxygen center in Si

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of nitrogen doping on vacancy-oxygen complexes in neutron irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2019-08

2. Photoluminescence enhancement from the defects state formed by neutron/gamma mixed irradiation in an epoxy resin for LED applications;Radiation Effects and Defects in Solids;2019-03-25

3. Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon;physica status solidi (a);2018-09-25

4. Growth and ripening of oxygen precipitation in neutron-irradiated Czochralski silicon;Materials Science in Semiconductor Processing;2018-02

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