Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation-Reference-Cited by-同舟云学术

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Study on changes in electrical and switching characteristics of NPT-IGBT devices by fast neutron irradiation

Published:2023-09 Issue:9 Volume:55 Page:3334-3341
ISSN:1738-5733
Container-title:Nuclear Engineering and Technology
language:en
Short-container-title:Nuclear Engineering and Technology

Author:

Baek Hani^ORCID,Park Byung Gun^ORCID,Shin Chaeho^ORCID,Sun Gwang Min^ORCID

Funder

National Research Council of Science and Technology

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Nuclear Energy and Engineering

Reference29 articles.

1. Baliga B. J. “Power Semiconductor Devices,” PWS Publishing Company, p 476.

2. Baliga B. J. “The IGBT Device : Physics, Design and Applications of the Insulated Gate Bipolar Transistor”.

3. "IGBT history, state-of-the-art, and future prospects.";Iwamuro,2017

4. "Application specific 1200V planar and trench IGBTs.";Shenoy,2006

5. "Switching characteristics of MCT's and IGBT's in power converters.";Trivedi;IEEE Trans. Electron. Dev.,1996

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