Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm
2. Formation trends in quantum dot growth using metalorganic chemical vapor deposition
3. The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD
4. Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
5. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. Growth of Uniform and Self-Aligned InAs Quantum Dots on Vicinal (100) GaAs Substrate by Metal Organic Chemical Vapor Deposition Technique for Laser Applications;Integrated Ferroelectrics;2010-11-12
2. InAs/GaAs quantum dots grown on different GaAs substrates with graded In x Ga1 − x As strain-reducing layer;Frontiers of Optoelectronics in China;2010-08-05
3. Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer;Semiconductors;2008-03
4. InAs/InP quantum dots with bimodal size distribution: Two evolution pathways;Journal of Applied Physics;2007-05
5. Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates;Journal of Applied Physics;2006-11-15
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