Growth of Uniform and Self-Aligned InAs Quantum Dots on Vicinal (100) GaAs Substrate by Metal Organic Chemical Vapor Deposition Technique for Laser Applications
Author:
Affiliation:
1. a Department of Physics & Astrophysics , University of Delhi , Delhi, 110007, India
2. b Solid State Physics Laboratory , Lucknow Road, Timarpur, Delhi, 110054, India
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584587.2010.504412
Reference21 articles.
1. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique
2. Tuning the bandgap of InAs quantum dots by selective-area MOCVD
3. Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
4. The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy
5. MBE-growth of InAs/GaAs(001) quantum dots at low temperatures
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