The evolution of self-assembled InAs/GaAs(001) quantum dots grown by growth-interrupted molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Link
http://stacks.iop.org/0957-4484/19/i=50/a=505701/pdf
Reference25 articles.
1. Self-organized growth on GaAs surfaces
2. Evolution of elongated (In,Ga)As–GaAs(100) islands with low indium content
3. The InAs/GaAs(001) Quantum Dots Transition: Advances on Understanding
4. Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)
5. Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth
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