Tracing the two- to three-dimensional transition in the InAs/GaAs(001) heteroepitaxial growth
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.205308/fulltext
Reference40 articles.
1. Kinetic aspects of the morphology of self-assembled InAs quantum dots on GaAs(001)
2. Migration-enhanced epitaxy of GaAs and AlGaAs
3. Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy
4. RHEED oscillation studies of pseudomorphic InGaAs strained layers on GaAs substrate
5. Wetting layer evolution in InAs/GaAs() heteroepitaxy: effects of surface reconstruction and strain
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