The impact of growth parameters on the formation of InAs quantum dots on GaAs(100) by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Experimental evidence of two-dimensional–three-dimensional transition in the Stranski–Krastanow coherent growth
2. Quantitative compositional analysis of InAs/GaAs quantum dots by scanning transmission electron microscopy
3. Wetting layer evolution in InAs/GaAs() heteroepitaxy: effects of surface reconstruction and strain
4. Formation trends in quantum dot growth using metalorganic chemical vapor deposition
5. Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
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1. OMVPE of InAs quantum dots on an InGaP surface;Materials Science in Semiconductor Processing;2013-08
2. The influence of growth parameters on the formation on InAs/GaAs by MOCVD;Optoelectronic Devices and Integration IV;2012-11-27
3. Measurements of the quantum-confined conduction band energy in the wetting layer surrounding individualIn0.4Ga0.6Asquantum dots by cross-sectional ballistic electron emission microscopy;Physical Review B;2010-07-12
4. Performance study of InAs/GaAs quantum dot covered by graded InxGa1−xAs layer;Thin Solid Films;2010-07
5. Nanofabrication of III–V semiconductors employing diblock copolymer lithography;Journal of Physics D: Applied Physics;2010-04-21
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